Datenblatt-pdf.com


DMP58D0SV Schematic ( PDF Datasheet ) - Diodes

Teilenummer DMP58D0SV
Beschreibung DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Hersteller Diodes
Logo Diodes Logo 




Gesamt 5 Seiten
DMP58D0SV Datasheet, Funktion
DMP58D0SV
Features
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Mechanical Data
Low On-Resistance
ESD Protected Gate to 500V
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 3)
“Green” Device (Note 4)
Qualified to AEC-Q 101 Standards for High Reliability
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
SOT-563
D2 G1
S1
ESD protected to 500V
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
S2 G2 D1
TOP VIEW
Internal Schematic
Value
-50
-50
±20
-160
Units
V
V
V
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
400
313
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BVDSS -50 ⎯ ⎯ V VGS = 0V, ID = -250μA
IDSS
⎯ ⎯ -1 μA VDS = -50V, VGS = 0V
IGSS
⎯ ⎯ ±5 μA VGS = ±20V, VDS = 0V
VGS(th) -0.8 -2.1
RDS (ON)
6
8
gFS 0.05 ⎯ ⎯
V VDS = VGS, ID = -250μA
Ω VGS = -5V, ID = -0.100A
S VDS = -25V, ID = -0.1A
Ciss
Coss
Crss
27
4
1.4
pF
pF VDS = -25V, VGS = 0V, f = 1.0MHz
pF
Notes:
1. RGS 20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
1 of 5
www.diodes.com
July 2009
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/





SeitenGesamt 5 Seiten
PDF Download[ DMP58D0SV Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
DMP58D0SVDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORDiodes
Diodes

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche