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Teilenummer | RLT780-1000G |
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Beschreibung | Laser Diode | |
Hersteller | Roithner | |
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Gesamt 1 Seiten ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
[email protected] www.roithner-laser.com
RLT780-1000G TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure: multi mode
Lasing wavelength: typ. 785 nm
Optical power: 1 W
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
1.2
1.5
10
-20 .. +30
-40 .. +70
UNIT
W
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Emitting Aperture
A
cw
1 x 100
µm²
Optical Output Power
Threshold Current
Operation Current
Forward Voltage
Lasing Wavelength
Spectral Width FWHM
Po
Ith
Iop
Uf
λp
∆λ
multi mode
cw
Po = 1 W
Po = 1 W
Po = 1 W
Po = 1 W
1W
390 420 450 mA
1.2 1.3 1.4 A
1.8 1.9 2.0 V
780 785 790 nm
0.3 1.0 1.5 nm
Beam Divergence
Beam Divergence
Monitor Current
θ//
θ⊥
Im
Po = 1 W
Po = 1 W
Po = 1 W
25 °
30 °
100 500 1500 µA
Free Datasheet http://www.datasheet4u.com/
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ RLT780-1000G Schematic.PDF ] |
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