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Número de pieza | RJK6015DPM | |
Descripción | MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJK6015DPM (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJK6015DPM
600V - 21A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.315 typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
Preliminary Datasheet
R07DS0438EJ0200
(Previous: REJ03G1752-0100)
Rev.2.00
Jun 21, 2012
D
1. Gate
2. Drain
3. Source
1
2
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
S
Ratings
600
±30
21
63
21
63
6
1.9
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0438EJ0200 Rev.2.00
Jun 21, 2012
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page RJK6015DPM
Preliminary
3
D=1
1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1 shot
pulse
θch – c (t) = γ s (t) • θch – c
θch – c = 2.08°C/W, Tc = 25°C
PDM
D=
PW
T
PW
0.001
10 μ
100 μ
1m
10 m
100 m
T
1
10 100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0438EJ0200 Rev.2.00
Jun 21, 2012
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJK6015DPM.PDF ] |
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