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Número de pieza | UPA2763 | |
Descripción | MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPA2763 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! μ PA2763
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0003EJ0100
Rev.1.00
May 31, 2010
Description
The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications.
Features
• Low on-state resistance
⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A)
⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A)
• Low Ciss 2100 pF TYP.
• Built-in gate protection diode
• Thin type surface mount package with heat spreader (8-pin HVSON)
• RoHS Compliant
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
100
±20
±42
±84
1.5
4.6
83
150
-55 to + 150
24.7
61.0
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
83.3
°C/W
Channel to Case (Drain) Thermal Resistance
Rth(ch-C)
1.5
°C/W
Notes: ∗1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μ H, VGS = 20→0 V
R07DS0003EJ0100 Rev.1.00
May 31, 2010
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page μ PA2763
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
100
VGS = 10 V
10
0V
1
0.1
Pulsed
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs DIODE
FORWARD CURRENT
1000
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10 100
IF - Diode Forward Current - A
Chapter Title
SWITCHING CHARACTERISTICS
1000
100
10
1
0.1
td(off)
td(on)
1
tr
tf
VDD = 50 V
VGS = 10 V
RG = 10 Ω
10 100
ID - Drain Current - A
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
IAS = 24.7 A
10
VDD = 50 V
VGS = 20 V→0 V
RG = 25 Ω
EAS = 61.0 mJ
1
0.00001
0.0001
0.001
L – Inductive Load - H
0.01
R07DS0003EJ0100 Rev.1.00
May 31, 2010
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet UPA2763.PDF ] |
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