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DMP21D0UFD Schematic ( PDF Datasheet ) - Diodes

Teilenummer DMP21D0UFD
Beschreibung 20V P-CHANNEL ENHANCEMENT MODE MOSFET
Hersteller Diodes
Logo Diodes Logo 




Gesamt 8 Seiten
DMP21D0UFD Datasheet, Funktion
Product Summary
V(BR)DSS
-20V
RDS(on) Max
495mΩ @ VGS = -4.5V
730mΩ @ VGS = -2.5V
960mΩ @ VGS = -1.8V
1300mΩ @ VGS = -1.5V
ID max
TA = 25°C
(Notes 4)
-1.14A
-0.94A
-0.85A
-0.75A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Portable electronics
A Product Line of
Diodes Incorporated
DMP21D0UFD
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate 3KV
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1212-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.005 grams (approximate)
X1-DFN1212-3
ESD PROTECTED TO 3kV
Top View
Bottom View
Drain
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
S
D
G
Pin-out Top view
Ordering Information (Note 3)
Part Number
DMP21D0UFD-7
Marking
K21
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
K21
YM
K21 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
1 of 8
www.diodes.com
March 2012
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/






DMP21D0UFD Datasheet, Funktion
1.4
1.2
1.0
0.8 ID = -1mA
0.6 ID = -250µA
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 12 Gate Threshold Variation vs. Ambient Temperature
10,000
A Product Line of
Diodes Incorporated
DMP21D0UFD
2.0
1.8
1.6
1.4
1.2 TA = 25°C
1.0
0.8
0.6
0.4
0.2
0
0.4 0.6 0.8 1.0 1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 13 Diode Forward Voltage vs. Current
100,000
1,000
100
TA = 150°C
TA = 125°C
10 TA = 85°C
TA = 25°C
1
04
8 12 16 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Leakage Current vs. Drain-Source Voltage
100,000
10,000
1,000
TA = 125°C
TA = 150°C
100
10
1
TA = 85°C
TA = 25°C
TA = -55°C
10,000
1,000
TA = 125°C
TA = 150°C
100
10
1
TA = 85°C
TA = 25°C
TA = -55°C
0.1
02 468
VGS, GATE-SOURCE VOLTAGE (V)
Fig.15 Leakage Current vs. Gate-Source Voltage
1,000
f = 1MHz
100
10
Ciss
Coss
Crss
0.1
02 468
VGS, GATE-SOURCE VOLTAGE (V)
Fig.16 Leakage Current vs. Gate-Source Voltage
1
0 2 4 6 8 10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 17 Typical Junction Capacitance
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
6 of 8
www.diodes.com
March 2012
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/

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