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PDF DMN3200U Data sheet ( Hoja de datos )
| Número de pieza | DMN3200U | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | TY Semiconductor | |
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Product specification
DMN3200U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• 90 mΩ @ VGS = 4.5V
• 110 mΩ @ VGS = 2.5V
• 200 mΩ @ VGS = 1.5V
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• ESD Protected Gate
• Fast Switching Speed
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 5)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
SOT-23
Drain
D
ESD PROTECTED TO 3kV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
GS
TOP VIEW
Symbol
VDSS
VGSS
ID
IDM
Value
30
±8
2.2
9
Units
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
650
192
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA
IDSS
⎯ ⎯ 1 μA VDS = 30V, VGS = 0V
IGSS
⎯ ⎯ ±5 μA VGS = ±8V, VDS = 0V
VGS(th) 0.45 ⎯ 1.0
V VDS = VGS, ID = 250μA
62 90
VGS = 4.5V, ID = 2.2A
RDS (ON) ⎯ 70 110 mΩ VGS = 2.5V, ID = 2A
150 200
VGS = 1.5V, ID = 0.67A
|Yfs| ⎯ 5 ⎯ S VDS =5V, ID = 2.2A
VSD ⎯ ⎯ 0.9 V VGS = 0V, IS = 1A
Ciss
Coss
Crss
⎯ 290 ⎯
⎯ 66 ⎯
⎯ 35 ⎯
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
pF
Notes:
1. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
http://www.twtysemi.com
Free Datasheet http://www.da1taoshfe1et4u.com/
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