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PDF DMN2215UDM Data sheet ( Hoja de datos )

Número de pieza DMN2215UDM
Descripción DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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DMN2215UDM
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
Dual N-Channel MOSFET
Low On-Resistance
100mΩ @VGS = 4.5V, ID = 2.5A
140mΩ @VGS = 2.5V, ID = 1.5A
215mΩ @VGS = 1.8V, ID = 1A
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate to 2kV HBM
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
SOT-26
G1
D1
S2 S1
ESD PROTECTED TO 2kV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current ( Note 4)
TA = 25°C
TA = 85°C
G2 D2
TOP VIEW
Schematic and Pin Configuration
Symbol
VDSS
VGSS
ID
IDM
Value
20
±12
2.0
1.4
7.0
Units
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
650
192
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Pulse width 10μs, duty cycle 1%.
Units
mW
°C/W
°C
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/

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