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Teilenummer | DMN2040LSD |
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Beschreibung | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
Hersteller | Diodes | |
Logo | ||
Gesamt 4 Seiten Features
• Dual N-Channel MOSFET
• Low On-Resistance
• 26mΩ @ VGS = 4.5V
• 36mΩ @ VGS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q 101 Standards for High Reliability
DMN2040LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
SOP-8L
D1
D2
TOP VIEW
S1 D1
G1 D1
S2 D2
G2 D2
TOP VIEW
Internal Schematic
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Pulsed Drain Current (Note 3)
Steady
State
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
20
±12
7.0
5.6
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
2
62.5
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
gfs
VSD
Ciss
Coss
Crss
Min Typ Max Unit
Test Condition
20 ⎯ ⎯ V VGS = 0V, ID = 250μA
⎯ ⎯ 1 μA VDS = 20V, VGS = 0V
⎯
⎯
±100
nA VGS = ±12V, VDS = 0V
0.6 ⎯ 1.2 V VDS = VGS, ID = 250μA
⎯
19
26
26
36
mΩ VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.2A
⎯ 12 ⎯ ms VDS = 10V, ID = 6.0A
0.5 ⎯ 1.2 V VGS = 0V, IS = 1.7A
⎯ 562 ⎯ pF
⎯
75
⎯
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
⎯ 65 ⎯ pF
Notes:
1. Device mounted on 2 oz. Copper pads on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN2040LSD
Document number: DS31517 Rev. 4 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ DMN2040LSD Schematic.PDF ] |
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