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PDF DMG3414U Data sheet ( Hoja de datos )
| Número de pieza | DMG3414U | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Product specification
Features
• Low On-Resistance
• 25mΩ @ VGS = 4.5V
• 29mΩ @ VGS = 2.5V
• 37mΩ @ VGS = 1.8V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMG3414U
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Weight: 0.008 grams (approximate)
Drain
Gate
D
TOP VIEW
Source
Internal Schematic
GS
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
20
±8
4.2
3.2
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Notes:
1. No purposefully added lead.
2. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
3. Repetitive rating, pulse width limited by junction temperature.
Value
0.78
162
-55 to +150
Unit
W
°C/W
°C
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