|
|
Número de pieza | AUIRLS3036 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AUIRLS3036 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! AUTOMOTIVE GRADE
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
G
S
G
Gate
PD - 97718A
AUIRLS3036
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
60V
1.9m
c2.4m
270A
195A
D
GDS
D2Pak
AUIRLS3036
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
c270
Units
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
190
195
1100
A
PD @TC = 25°C Maximum Power Dissipation
380 W
Linear Derating Factor
2.5 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
dAvalanche Current
lRepetitive Avalanche Energy
fPeak Diode Recovery
±16
290
See Fig. 14, 15, 22a, 22b
8.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
-55 to + 175
300
°C
Thermal Resistance
Symbol
RJC
RJA
Parameter
kJunction-to-Case 11
jJunction-to-Ambient (PCB Mount, steady state)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da1t2as/0h5ee/1t41u.com/
1 page 1000
100 TJ = 175°C
10 TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.5
300
250 Limited By Package
200
150
100
50
0
25 50 75 100 125 150
Fig 9. MaxTimC ,uCmasDerTaeimn pCeurartruerent(°vCs) .
Case Temperature
3.0
175
2.5
2.0
1.5
1.0
0.5
0.0
-10 0 10 20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
AUIRLS3036
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
100
Limited by
package
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
10msec
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
75
Id = 5mA
70
65
60
55
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP 27A
50A
BOTTOM 165A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
Free Datasheet http://www.datasheet4u.com/
5 Page AUIRLS3036
Ordering Information
Base part number
AUIRLS3036
Package Type
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Complete Part Number
AUIRLS3036
AUIRLS3036TRL
AUIRLS3036TRR
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet AUIRLS3036.PDF ] |
Número de pieza | Descripción | Fabricantes |
AUIRLS3034 | Power MOSFET ( Transistor ) | International Rectifier |
AUIRLS3034-7P | Power MOSFET ( Transistor ) | Infineon |
AUIRLS3034-7P | Power MOSFET ( Transistor ) | International Rectifier |
AUIRLS3036 | Power MOSFET ( Transistor ) | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |