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PDF AUIRFS3107-7P Data sheet ( Hoja de datos )

Número de pieza AUIRFS3107-7P
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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AUTOMOTIVE GRADE
PD - 96395A
AUIRFS3107-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Enhanced dV/dT and dI/dT capability
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
HEXFET® Power MOSFET
D VDSS
75V
RDS(on) typ.
2.1mΩ
max.
ID (Silicon Limited)
c2.6mΩ
260A
S ID (Package Limited)
240A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
D
S
SS
S
S
G
D2Pak 7 Pin
AUIRFS3107-7P
GD S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
dAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
klRθJC
Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount)
Max.
c260
190
240
1060
370
2.5
± 20
320
See Fig. 14, 15, 22a, 22b
13
-55 to + 175
300
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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AUIRFS3107-7P pdf
1000
100
TJ = 175°C
10 TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
300
Limited By Package
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-10 0 10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
AUIRFS3107-7P
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10msec
1msec
DC
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
95
Id = 5mA
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP 28A
50A
BOTTOM 160A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
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AUIRFS3107-7P arduino
AUIRFS3107-7P
Ordering Information
Base part
Package Type
AUIRFS3107-7P D2Pak -7Pin
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
75
800
800
Complete Part Number
AUIRFS3107-7P
AUIRFS3107-7TRL
AUIRFS3107-7TRR
www.irf.com
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