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PDF 2SA1774 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1774 | |
| Descripción | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2SA1774/D
PNP Silicon General Purpose
Amplifier Transistor
This PNP transistor is designed for general purpose amplifier applications. This
device is housed in the SOT–416/SC–90 package which is designed for low power
surface mount applications, where board space is at a premium.
• Reduces Board Space
• High hFE, 210 – 460 (typical)
• Low VCE(sat), < 0.5 V
• Available in 8 mm, 7–inch/3000 Unit Tape and Reel
2SA1774
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
2
1
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
2SA1774 = F9
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
–60
–50
–6.0
–100
Vdc
Vdc
Vdc
mAdc
CASE 463–01, STYLE 1
SOT–416/SC–90
COLLECTOR
3
THERMAL CHARACTERISTICS
Rating
Symbol
Power Dissipation(1)
PD
Junction Temperature
TJ
Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Max
150
150
– 55 ~ + 150
Symbol
Unit
mW
°C
°C
Min
1
BASE
2
EMITTER
Typ Max Unit
Collector–Base Breakdown Voltage (IC = –50 µAdc, IE = 0)
V(BR)CBO
–60
—
— Vdc
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–50
—
— Vdc
Emitter–Base Breakdown Voltage (IE = –50 µAdc, IE = 0)
V(BR)EBO
–6.0
—
— Vdc
Collector–Base Cutoff Current (VCB = –30 Vdc, IE = 0)
ICBO — — –0.5 nA
Emitter–Base Cutoff Current (VEB = –5.0 Vdc, IB = 0)
Collector–Emitter Saturation Voltage(2)
(IC = –50 mAdc, IB = –5.0 mAdc)
DC Current Gain(2)
(VCE = –6.0 Vdc, IC = –1.0 mAdc)
IEBO
VCE(sat)
—
—
— –0.5 µA
Vdc
— –0.5
hFE —
120 — 560
Transition Frequency
(VCE = –12 Vdc, IC = –2.0 mAdc, f = 30 MHz)
fT MHz
— 140 —
Output Capacitance (VCB = –12 Vdc, IE = 0 Adc, f = 1 MHz)
COB
— 3.5 — pF
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
Thermal Clad is a trademark of the Bergquist Company
REV 1
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
1 page  
PACKAGE DIMENSIONS
2SA1774
–A–
S
2
D 3 PL
0.20 (0.008) M B
3
1
G –B–
K 0.20 (0.008) A
JC
LH
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 463–01
ISSUE A
SOT–416/SC–90
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 0.70 0.80 0.028 0.031
B 1.40 1.80 0.055 0.071
C 0.60 0.90 0.024 0.035
D 0.15 0.30 0.006 0.012
G 1.00 BSC
0.039 BSC
H ––– 0.10 ––– 0.004
J 0.10 0.25 0.004 0.010
K 1.45 1.75 0.057 0.069
L 0.10 0.20 0.004 0.008
S 0.50 BSC
0.020 BSC
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SA1774.PDF ] | |
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