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Teilenummer | C6042 |
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Beschreibung | NPN Transistor - 2SC6042 | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 5 Seiten TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6042
High-Speed, High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC6042
Unit: mm
• High-speed switching: tf = 0.2 μs (max) (IC = 0.3A)
• High breakdown voltage: VCES = 800 V, VCEO = 375 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
800
800
375
8
1.0
2.0
0.5
1.0
150
−55 to 150
V
V
V
V
A
A
W
°C
°C
1. Base
2. Collector
3. Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-13
Free Datasheet http://www.datasheet4u.com/
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ C6042 Schematic.PDF ] |
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