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G20N50C Schematic ( PDF Datasheet ) - Vishay

Teilenummer G20N50C
Beschreibung SIHG20N50C
Hersteller Vishay
Logo Vishay Logo 




Gesamt 8 Seiten
G20N50C Datasheet, Funktion
Power MOSFET
SiHG20N50C
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560
VGS = 10 V
76
21
34
Single
0.270
D
TO-247AC
G
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved Trr/Qrr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-247AC
SiHG20N50C-E3
SiHG20N50C-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)e
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A.
c. ISD 18 A, dI/dt 380 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Limited by maximum junction temperature.
LIMIT
500
± 30
20
11
80
1.8
361
250
5
- 55 to + 150
300d
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
40
0.5
UNIT
V
A
W/°C
mJ
W
V/ns
°C
UNIT
°C/W
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vFishary.coem/deoc?910D00 a t a s






G20N50C Datasheet, Funktion
SiHG20N50C
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-+
Rg
dV/dt controlled by Rg
+
Driver same type as D.U.T.
ISD controlled by duty factor “D”
- VDD
D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
VDD
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91382.
www.vishay.com
6
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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