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PDF DZT5401 Data sheet ( Hoja de datos )
| Número de pieza | DZT5401 | |
| Descripción | PNP SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes | |
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DZT5401
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DZT5551)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 3)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.112 grams (approximate)
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4 2 C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-160
-150
-5.0
-600
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation @TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
Tj, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-160
-150
-5.0
⎯
⎯
hFE
VCE(SAT)
50
60
50
⎯
VBE(SAT)
⎯
Cobo
hfe
fT
NF
⎯
40
100
⎯
Max
⎯
⎯
⎯
-50
-50
⎯
240
⎯
-0.2
-0.5
-1.0
6.0
200
300
8.0
Unit Test Condition
V IC = -100μA, IE = 0
V IC = -1.0mA, IB = 0
V IE = -10μA, IC = 0
nA VCB = -120V, IE = 0
μA VCB = -120V, IE = 0, TA = 150°C
nA VEB = -3.0V, IC = 0
IC = -1.0mA, VCE = -5.0V
⎯ IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
pF
⎯
MHz
dB
VCB = -10V, f = 1.0MHz, IE = 0
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -10mA, f = 100MHz
VCE = -5.0V, IC = -200μA, RS = 10Ω, f = 1.0kHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300ms. Duty cycle ≤ 2%.
DS31218 Rev. 2 – 2
1 of 4
www.diodes.com
DZT5401
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
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