|
|
Número de pieza | FDMS86520L | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMS86520L (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! FDMS86520L
N-Channel PowerTrench® MOSFET
60 V, 22 A, 8.2 mΩ
April 2011
Features
General Description
Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
Advanced package and silicon combination for low rDS(on) and
high efficiency
MSL1 robust package design
100% UIL tested
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
RoHS Compliant
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
Top Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
22
71
13.5
60
91
69
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
50
°C/W
Device Marking
FDMS86520L
Device
FDMS86520L
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMS86520L.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMS86520 | N-Channel MOSFET | Fairchild Semiconductor |
FDMS86520L | N-Channel MOSFET | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |