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Número de pieza | FDMS86300DC | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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FDMS86300DC
N-Channel Dual CoolTM Power Trench® MOSFET
80 V, 60 A, 3.1 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A
Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A
High performance technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Pin 1
S
D
D
D
D
S
S
D
D
G
S
S
S
Pin 1
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
80
±20
60
148
24
150
240
125
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.3
1.0
38
81
16
23
11
°C/W
Device Marking
86300
Device
FDMS86300DC
Package
Dual CoolTM Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 24 A
8
6
4
VDD = 30 V
VDD = 40 V
VDD = 50 V
10000
1000
100
Ciss
Coss
Crss
2
0
0 20 40 60 80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
f = 1 MHz
10 VGS = 0 V
5
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
80
100
TJ = 25 oC
10 TJ = 100 oC
TJ = 125 oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
Figure9. Unclamped Inductive
Switching Capability
500
150
VGS = 10 V
120
VGS = 8 V
90
60
Limited by Package
30
RθJC = 1.0 oC/W
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
150
200
100
10
THIS AREA IS
1 LIMITED BY rDS(on)
SINGLE PULSE
0.1
TJ = MAX RATED
RθJA = 81 oC/W
TA = 25 oC
0.01
0.01
0.1
1
10
1 ms
10 ms
100 ms
1s
10 s
DC
100 400
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
2000
1000
100
SINGLE PULSE
RθJA = 81 oC/W
TA = 25 oC
10
1
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
100
Figure 12. Single Pulse Maximum
Power Dissipation
1000
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDMS86300DC.PDF ] |
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