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Teilenummer | 3RW |
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Beschreibung | SILICON RECTIFIER DIODES | |
Hersteller | EDI | |
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Gesamt 2 Seiten 3W 3RW
HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY
SILICON RECTIFIER DIODES
Up to 250 ns max. recovery
Small size
Exceptionally low leakage
Avalanche characteristics
EDI
Typ e
PRV
Voits
REVERSE RECOVERY TIME
(Fig.4)
3W2
3W2.5
3W3
3RW2
3RW2.5
3RW3
2,000
2,500
3,000
2,000
2,500
3,000
http://www.DataSheet4U.com/
Not applicable
Not applicable
Not applicable
250 ns max.
250 ns max.
250 ns max.
ELECTRICAL CHARACTERISTICS(at TA=25°C Unless Otherwise Specified)
ELECTRICAL CHARACTERISTICS
3W SERIES 3RW SERIIES
Average Rectified Forward Current @ 50 oC, IO (Fig.1)
2 Amp
1.5 Amp
Max. Peak Surge Cureent,IFSM (8.3 ms) (Fig.2)
Max.Forward Voltage Drop @ 2.0 A, VF
Max. DC Reverse Current @ PRV and 25 oC, IR
Max. DC Reverse Current @ PRV and100oC, IR
Ambient Operating Temperature Range,TA
Storage Temperature Range,TSTG
300 Amp
200 Amp
3VDC max.
4VDC max.
5A
10 A
150 A
200 A
-55 oC to +150 oC -55 oC to +125 oC
-55 oC to +150 oC
NOTES:It is recommemded that a proper heat sink be used on the terminals of this device
between the body and soldering point to prevent damage from excess heat.
Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 OC
EDI reserves the right to change these specifications at any time without notice.
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 3RW Schematic.PDF ] |
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