|
|
PDF AP6982M Data sheet ( Hoja de datos )
| Número de pieza | AP6982M | |
| Descripción | N-CHANNEL ENHANCEMENT MODE | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AP6982M (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
AP6982M
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Single Drive Requirement
▼ Surface Mount Package
Description
D2
D2 D2
D1 D2
D1 D1
D1
SSOO-8-8
G2
G2
S2
S1 GG11 S2
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
CH-1
CH-2
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
30V
18mΩ
8.8A
30V
25mΩ
7.5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
http://www.DataSheet4U.net/
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30 30
±25 ±25
8.8 7.5
76
30 30
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
200526041
datasheet pdf - http://www.DataSheet4U.net/
1 page  
Channel-1
14
ID=8A
12
V DS =16V
10 V DS =20V
V DS =24V
8
6
4
2
0
0 10 20 30
Q G , Total Gate Charge (nC)
40
Fig 7. Gate Charge Characteristics
AP6982M
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10 100us
1ms
1
10ms
100ms
0.1 T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1 0.1
0.05
http://www.DataSheet4U.net/
0.01
0.001
0.0001
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135oC/W
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP6982M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP6982GM | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP6982GN2-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP6982M | N-CHANNEL ENHANCEMENT MODE | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |