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Teilenummer | RM4Z |
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Beschreibung | SILICON RECTIFIER DIODES | |
Hersteller | EIC | |
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Gesamt 2 Seiten RM4 - RM4Z
PRV : 100 - 400 Volts
Io : 1.7 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.21 grams
SILICON RECTIFIER DIODES
DO - 201AD
0.21 (5.33)
0.19 (4.83)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.375 (9.53)
0.285 (7.24)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
http://www.DataSheet4U.net/
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Reverse Voltage
Maximum Peak Reverse Surge Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current
Half-cycle Sine wave, 50 Hz, Single Shot
Maximum Forward Voltage at I F = 3.0 A
Maximum Reverse Current
Ta = 25 °C
at VR = VRmax.
Ta = 150 °C
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRM
VRSM
IF(AV)
RM4Y
RM4Z
RM4
100 200 400
150 250 450
1.7 (3.0 A is with Heatsink)
IFSM
200
VF
IR
IR(H)
TJ
TSTG
0.95
10
50
- 40 to + 150
- 40 to + 150
UNIT
V
V
A
A
V
μA
μA
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005
datasheet pdf - http://www.DataSheet4U.net/
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ RM4Z Schematic.PDF ] |
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