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Teilenummer | CDBQR54 |
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Beschreibung | SMD Schottky Barrier Diode | |
Hersteller | Comchip | |
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Gesamt 4 Seiten SMD Schottky Barrier Diode
CDBQR54(RoHS Device)
Io = 200 mA
VR = 30 Volts
SMD Diodes Specialist
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking Code: Cathode band & BF
Mounting position: Any
Weight: 0.001 gram(approx.).
0402(1005)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
http://www.DataSheet4U.net/
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 30 V
RMS reverse voltage
VR(RMS)
21 V
Average forward rectified current
IO 200 mA
Repetitive peak forward current
Forward current,surge peak
Power dissipation
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFRM
IFSM
PD
0.3 A
0.6 A
125 mW
Storage temperature
TSTG
-65
+125 OC
Junction temperature
Tj +125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
VR = 25V
0.24
0.32
VF 0.4 V
0.5
1
IR 2 uA
Capacitance between terminals f = 1 MHz, and 1 VDC reverse voltage
CT
10 pF
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
Trr
5 nS
QW-A1122
Comchip Technology CO., LTD.
REV:B
Page 1
datasheet pdf - http://www.DataSheet4U.net/
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CDBQR54 Schematic.PDF ] |
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