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Teilenummer | 3N70A |
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Beschreibung | 700 VOLTS N-CHANNEL POWER MOSFET | |
Hersteller | Unisonic Technologies | |
Logo | ||
Gesamt 7 Seiten UNISONIC TECHNOLOGIES CO., LTD
3N70A
700V, 3A N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N70A is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in the high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) ≤4.0Ω @VGS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
www.DataSheet.net/
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N70AL-TN3-R
3N70AG-TN3-R
Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-620.A
Datasheet pdf - http://www.DataSheet4U.co.kr/
3N70A
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage, VSD (V)
Power MOSFET
Drain-Source On-State
3.0 Resistance Characteristics
2.5 VGS=10V,
2.0 ID=1.5A
1.5
1.0
0.5
0
0 2 468
Drain to Source Voltage, VDS (V)
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Maximum Drain Current vs. Case
Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50 75 100 125
Case Temperature, TC (°C)
150
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R502-620.A
Datasheet pdf - http://www.DataSheet4U.co.kr/
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ 3N70A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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