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3N65Z Schematic ( PDF Datasheet ) - Unisonic Technologies

Teilenummer 3N65Z
Beschreibung 650V N-CHANNEL POWER MOSFET
Hersteller Unisonic Technologies
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Gesamt 8 Seiten
3N65Z Datasheet, Funktion
UNISONIC TECHNOLOGIES CO., LTD
3N65Z
3A, 650V N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 3N65Z is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
„ FEATURES
* RDS(ON) = 3.8@VGS = 10 V
* Ultra low gate charge ( typical 10nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
www.DataSheet.net/
1
TO-220F
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N65ZL-TF3-T
3N65ZG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-746.A
Datasheet pdf - http://www.DataSheet4U.co.kr/






3N65Z Datasheet, Funktion
3N65Z
„ TYPICAL CHARACTERISTICS
On-State Characteristics
10
1
VGS
Top: 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°C
0.1 1 10
Drain-to-Source Voltage, VDS (V)
Power MOSFET
Transfer Characteristics
10
1
0.1
2
Notes:
1. VDS=50V
2. 250µs Pulse Test
46
8 10
Gate-Source Voltage, VGS (V)
www.DataSheet.net/
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-746.A
Datasheet pdf - http://www.DataSheet4U.co.kr/

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