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PDF RD20HMF1 Data sheet ( Hoja de datos )

Número de pieza RD20HMF1
Descripción Silicon MOSFET Power Transistor
Fabricantes Mitsubishi Electric Semiconductor 
Logotipo Mitsubishi Electric Semiconductor Logotipo



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< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
DESCRIPTION
RD20HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band RF power amplifiers
applications.
FEATURES
High power gain:
Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz
High Efficiency: 55%typ.
APPLICATION
For output stage of high power amplifiers in 900MHz band
Mobile radio sets.
OUTLINE DRAWING
22.0+/-0.3
18.0+/-0.3
7.2+/-0.5 7.6+/-0.3
1
3
2.8+/-0.3
2
R1.6
4-C1
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
RoHS COMPLIANT
RD20HMF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
www.DataSheet.net/
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
VGSS
Pch
Drain to source voltage
Gate to source voltage
Channel dissipation
Vgs=0V
Vds=0V
Tc=25°C
Pin Input power
ID Drain current
Zg=Zl=50
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
71.4
6
6
175
-40 to +175
2.1
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Oct.2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 page




RD20HMF1 pdf
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
TEST CIRCUIT(f=900MHz)
Vgg Vdd
RF-in
C1 4.7OHM
C3
C2
6pF 8pF
L1 900MHz
RD20HMF1
L2
82pF
5pF
5pF
6pF
9pF 6pF 2pF
22μF,50V
82pF
RF-OUT
53
90
100
8
11
17
www.DataSheet.net/
15
17
38
90
100
8
4.8
10.8
C1:1000pF,22000pF in parallel
C2:100pF*2 in parallel
C3:1000pF,22000pF in parallel
Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
L1:1Turn,I.D3mm,D1.5mm silver plateted copper wire
L2:1Turn,I.D3mm,D1.5mm silver plateted copper wire
Publication Date : Oct.2011
5
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