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PDF RD04HMS2 Data sheet ( Hoja de datos )
| Número de pieza | RD04HMS2 | |
| Descripción | Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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< Silicon RF Power MOS FET (Discrete) >
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
DESCRIPTION
RD04HMS2 is MOS FET type transistor specifically
designed for VHF/UHF/890-950MHz RF power
amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
FEATURES
1. High Power gain and High Efficiency
Pout=5.0Wtyp., Gp=14dBtyp.
Drain Effi.=53%typ.
@Vds=12.5V, Pin=0.2W, f=950MHz
2. Integrated gate protection diode
INDEX MARK
(Gate)
APPLICATION
For output stage of high power amplifiers in VHF/
UHF/890-950MHz band mobile radio sets.
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
RoHS COMPLIANT
RD04HMS2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.www.DataSheet.net/
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders (i.e. tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
VDSS Drain to Source Voltage
VGSS Gate to Source Voltage
Pch Channel Dissipation
Pin Input Power
ID Drain Current
Tch Junction Temperature
Tstg Storage Temperature
Rth j-c Thermal Resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50
-
-
-
Junction to Case
RATINGS
40
-5/+10
50
0.7
3
150
-40 to +125
2.5
Note: Above parameters are guaranteed independently.
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Oct．2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
< Silicon RF Power MOS FET (Discrete) >
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
VHF-band TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Pin-Po CHARACTERISTICS @f=135MHz
45 Ta=+25deg.C,Vds=12.5V,Idq=0.1A
90
40 Pout
35
80
70
30 60
25 50
Gp
20 40
15
10 ηD
30
20
5 Idd 10
00
0 5 10 15 20 25
Pin(dBm)
Pin-Po CHARACTERISTICS @f=155MHz
45 Ta=+25deg.C,Vds=12.5V,Idq=0.1A
90
Pin-Po CHARACTERISTICS @f=135MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
9
90
8 80
7 ηD 70
6 60
5
Pout
50
4 40
3
2
1 Idd
Gp
30
20
10
00
0 0.05 0.1 0.15 0.2 0.25 0.3
Pin(W)
Pin-Po CHARACTERISTICS @f=155MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
9
90
40 80 8 80
Pout
ηD
35 70 7 70
30 60
25 50
20 Gp 40
15 30
10 ηD
5
20
Idd 10
00
0 5 10 15 20 25
Pin(dBm)
Pin-Po CHARACTERISTICS @f=175MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
45
90
40
Pout
35
80
70
30 60
25 50
20 Gp 40
15
10 ηD
30
20
5 Idd 10
00
0 5 10 15 20 25
Pin(dBm)
6
5
www.DataSheet.net/
4
Pout
60
50
40
3 30
Gp
2 20
1 Idd
10
00
0 0.05 0.1 0.15 0.2 0.25 0.3
Pin(W)
Pin-Po CHARACTERISTICS @f=175MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
9
90
8 ηD 80
7 70
6 60
Pout
5 50
4 40
3
2
1 Idd
Gp
30
20
10
00
0 0.05 0.1 0.15 0.2 0.25 0.3
Pin(W)
Publication Date : Oct．2011
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
< Silicon RF Power MOS FET (Discrete) >
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
890-950MHz-band TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Pin-Po CHARACTERISTICS @f=890MHz
40 Ta=+25deg.C,Vds=12.5V,Idq=0.1A
80
35 70
30 Pout
60
ηD
25 50
20
Gp
15
40
30
10 20
5 10
Idd
00
0 5 10 15 20 25
Pin(dBm)
Pin-Po CHARACTERISTICS @f=920MHz
40 Ta=+25deg.C,Vds=12.5V,Idq=0.1A
80
35 70
30 Pout
60
ηD
25 50
20
Gp
15
40
30
10 20
5 10
Idd
00
0 5 10 15 20 25
Pin(dBm)
Pin-Po CHARACTERISTICS @f=890MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
7
70
6 60
5 ηD
50
4 40
Pout
3 30
2 Gp 20
1 10
Idd
00
0 0.05 0.1 0.15 0.2 0.25 0.3
Pin(W)
Pin-Po CHARACTERISTICS @f=920MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
7
70
6
5
4
www.DataSheet.net/
3
ηD
Pout
60
50
40
30
2 Gp 20
1 10
Idd
00
0 0.05 0.1 0.15 0.2 0.25 0.3
Pin(W)
Pin-Po CHARACTERISTICS @f=950MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
40
80
35 70
30 Pout
60
ηD
25 50
20
Gp
15
40
30
10 20
5 10
Idd
00
0 5 10 15 20 25
Pin(dBm)
Pin-Po CHARACTERISTICS @f=950MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
7
70
6
ηD
5
Pout
4
60
50
40
3 30
2 Gp 20
1 10
Idd
00
0 0.05 0.1 0.15 0.2 0.25 0.3
Pin(W)
Publication Date : Oct．2011
11
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet RD04HMS2.PDF ] | |
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