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RD02MUS1B Schematic ( PDF Datasheet ) - Mitsubishi Electric Semiconductor

Teilenummer RD02MUS1B
Beschreibung Silicon MOSFET Power Transistor
Hersteller Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor Logo 




Gesamt 9 Seiten
RD02MUS1B Datasheet, Funktion
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
OUTLINE DRAWING
DESCRIPTION
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
6.0+/-0.15
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
INDEX MARK
(Gate)
www.DataSheet.net/
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct.2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/






RD02MUS1B Datasheet, Funktion
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=11.61+j17.88
Zout*=6.83+j5.21
175MHz Zin*
175MHz Zout*
520MHz Zin* Zout*
Zo=50
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of ionuptuptuitmimpepdeadnacnece
www.DataSheet.net/
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
520MHz Zin*
520MHz Zout*
Zin*=1.20+j5.47
Zout*=5.56+j1.31
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
Publication Date : Oct.2011
6
Datasheet pdf - http://www.DataSheet4U.co.kr/

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SeitenGesamt 9 Seiten
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