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RD01MUS2B Schematic ( PDF Datasheet ) - Mitsubishi Electric Semiconductor

Teilenummer RD01MUS2B
Beschreibung Silicon MOSFET Power Transistor
Hersteller Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor Logo 




Gesamt 15 Seiten
RD01MUS2B Datasheet, Funktion
< Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
DESCRIPTION
RD01MUS2B is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from
gate to source for ESD protection.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
0.1
φ
1.5+/-0.1
LOT No.
FEATURES
•High power gain and High Efficiency.
Pout 1.6W Typ, Gp 15dBTyp, 70%Typ
@Vdd=7.2V,f=527MHz
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANCE
RD01MUS2B-101,T113 is a RoHS compliant products.
www.DataSheet.net/
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V
25 V
VGSS Gate to source voltage Vds=0V
-5/+10
V
Pch Channel dissipation Tc=25°C
3.6 W
Pin Input Power
Zg=Zl=50
100 mW
ID Drain Current
- 600 mA
Tch Channel Temperature
- 150 °C
Tstg Storage temperature
- -40 to +125 °C
Rth j-c Thermal resistance
Junction to case
Note: Above parameters are guaranteed independently.
34.5
°C/W
D
G
S
SCHEMATIC DRAWING
Publication Date : Nov.2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/






RD01MUS2B Datasheet, Funktion
< Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
Zout* (f=527MHz)
Zo=50ohm
f=527MHz
Zin* (f=527MHz)
Zo=50ohm
@Pin=30mW, Vds=7.2V,Idq=40mA
f Zout*
(MHz)
(ohm)
527 12.67 + j 6.67
Zout*: Complex conjugate of output impedance
www.DataSheet.net/
f=527MHz
Publication Date : Nov.2011
@Pin=30mW, Vds=7.2V,Idq=40mA
f Zin*
(MHz)
(ohm)
527 5.93 + j 15.54
Zin*: Complex conjugate of intput impedance
6
Datasheet pdf - http://www.DataSheet4U.co.kr/

6 Page









RD01MUS2B pdf, datenblatt
< Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
Zout* (f=890, 915, 941MHz)
Zo=50ohm
f=941MHz
f=915MHz
f=890MHz
Zin* (f=890, 915, 941MHz)
Zo=50ohm
@Pin=30mW, Vds=7.2V,Idq=40mA
f Zout*
(MHz)
(ohm)
890 8.80 - j 0.18
915 8.60 + j 0.37
941 8.39 + j 1.01
Zout*: Complex conjugate of output impedance
www.DataSheet.net/
f=915MHz
f=890MHz
f=941MHz
Publication Date : Nov.2011
@Pin=30mW, Vds=7.2V,Idq=40mA
f Zin*
(MHz)
(ohm)
890 2.09 + j 2.48
915 2.19 + j 2.78
941 2.37 + j 2.82
Zin*: Complex conjugate of intput impedance
12
Datasheet pdf - http://www.DataSheet4U.co.kr/

12 Page





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