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ER2003CT Schematic ( PDF Datasheet ) - Pan Jit International

Teilenummer ER2003CT
Beschreibung (ER2000CT - ER2006CT) ISOLATION SUPERFAST RECOVERY RECTIFIER
Hersteller Pan Jit International
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Gesamt 2 Seiten
ER2003CT Datasheet, Funktion
ER2000CT~ER2006CT
ISOLATION SUPERFAST RECOVERY RECTIFIER
VOLTAGE 50 to 600 Volts CURRENT 20.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: TO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
.058(1.47)
.042(1.07)
MAXIMUM RATINGAND ELECTRICALCHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
www.DataSheet.net/
PARAMETER
SYMBOL ER2000CT ER2001CT ER2001ACT ER2002CT ER2003CT ER2004CT ER2006CT UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100 150 200 300 400 600
V
Maximum RMS Voltage
VR M S
35
70 105 140 210 280 420 V
Maximum DC Blocking Voltage
VD C 50 100 150 200 300 400 600 V
Maximum Average Forward Current at Tc=90oC
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 10A
Maximum DC Reverse Current TJ=25 OC
at Rated DC Blocking VoltageTJ=100 OC
Maximum Reverse Recovery Time (Note 2)
IF (AV )
IF S M
VF
IR
trr
20.0
A
150 A
0.95 1.3 1.7 V
1
500
µA
35 50 100 ns
Typical Junction capacitance (Note 1)
CJ
85 pF
Typical thermal Resistance (Note 3)
RθJ c
3.0 OC / W
Operating Junction and Storage Temperature Range
TJ,TS TG
-50 to +150
OC
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-JUL.22.2009
1
PAGE . 1
Datasheet pdf - http://www.DataSheet4U.co.kr/





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