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Teilenummer | RJH65S04DPQ-A0 |
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Beschreibung | IGBT | |
Hersteller | Renesas | |
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Gesamt 4 Seiten Preliminary Datasheet
RJH65S04DPQ-A0
650V - 50A - IGBT
Application: Inverter
R07DS0849EJ0001
Rev.0.01
Jul 06, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj = 125C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector to emitter diode Tc = 25°C
forward current
Tc = 100°C
Collector dissipation
Junction temperature
Storage temperature
Notes: 1. Value at Tc = 25C
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Symbol
VCES / VR
VGES
IC
IC
IDF
IDF
PC Note1
Tj
Tstg
Ratings
650
±30
100
50
100
50
378
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
R07DS0849EJ0001 Rev.0.01
Jul 06, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RJH65S04DPQ-A0 Schematic.PDF ] |
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