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RJP1CS07DWT Schematic ( PDF Datasheet ) - Renesas

Teilenummer RJP1CS07DWT
Beschreibung IGBT
Hersteller Renesas
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Gesamt 4 Seiten
RJP1CS07DWT Datasheet, Funktion
Preliminary Datasheet
RJP1CS07DWT/RJP1CS07DWA
1250V - 150A - IGBT
Application: Inverter
R07DS0830EJ0003
Rev.0.03
Jul 05, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)
High speed switching
Short circuit withstands time (10 s min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP1CS07DWT-80
32
3
1
3
3
www.DataSheet.net/
Wafer: RJP1CS07DWA-80
Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC Note1
IC Note1
Tj
Notes: 1. This data is a regulated value in evaluation package.
Ratings
1250
±30
300
150
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0830EJ0003 Rev.0.03
Jul 05, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/





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