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PDF RJH60V1BDPE Data sheet ( Hoja de datos )

Número de pieza RJH60V1BDPE
Descripción IGBT
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJH60V1BDPE Hoja de datos, Descripción, Manual

Preliminary Datasheet
RJH60V1BDPE
600 V - 8 A - IGBT
Application: Inverter
R07DS0743EJ0200
Rev.2.00
May 25, 2011
Features
Short circuit withstand time (6 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (25 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
C
123
1. Gate
G
2. Collector
3. Emitter
4. Collector
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E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iD(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
16
8
32
8
32
52
2.38
1.75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 page




RJH60V1BDPE pdf
RJH60V1BDPE
Switching Characteristics (Typical) (1)
1000
tf
100
td(off)
td(on)
10
tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1 10
Collector Current IC (A)
(Inductive load)
100
Switching Characteristics (Typical) (3)
1000
VCC = 300 V, VGE = 15 V
IC = 8 A, Tc = 150°C
tf
100
td(off)
td(on)
tr
10
1 10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 8 A, Rg = 5 Ω
tf
100
td(off)
td(on)
tr
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
0.1 Eoff
0.01
1
Eon
10
Collector Current IC (A)
(Inductive load)
100
Switching Characteristics (Typical) (4)
1
Eoff
0.1
Eon
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VCC = 300 V, VGE = 15 V
IC = 8 A, Tc = 150°C
0.01
1 10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
1
VCC = 300 V, VGE = 15 V
IC =8 A, Rg = 5 Ω
Eoff
0.1
Eon
0.01
25
50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 5 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/

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