Datenblatt-pdf.com


RJH1CV5DPQ-E0 Schematic ( PDF Datasheet ) - Renesas

Teilenummer RJH1CV5DPQ-E0
Beschreibung IGBT
Hersteller Renesas
Logo Renesas Logo 




Gesamt 4 Seiten
RJH1CV5DPQ-E0 Datasheet, Funktion
Preliminary Datasheet
RJH1CV5DPQ-E0
1200V - 25A - IGBT
Application: Inverter
R07DS0523EJ0400
Rev.4.00
Jan 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 200 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 200 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
Tj
Tstg
Ratings
1200
30
50
25
75
25
75
260.4
0.48
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
R07DS0523EJ0400 Rev.4.00
Jan 19, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/





SeitenGesamt 4 Seiten
PDF Download[ RJH1CV5DPQ-E0 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
RJH1CV5DPQ-E0IGBTRenesas
Renesas

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche