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RJH1CV6DPQ-E0 Schematic ( PDF Datasheet ) - Renesas

Teilenummer RJH1CV6DPQ-E0
Beschreibung IGBT
Hersteller Renesas
Logo Renesas Logo 




Gesamt 10 Seiten
RJH1CV6DPQ-E0 Datasheet, Funktion
Preliminary Datasheet
RJH1CV6DPQ-E0
1200V - 30A - IGBT
Application: Inverter
R07DS0524EJ0500
Rev.5.00
Jun 12, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 180 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
1200
30
60
30
90
30
90
290
0.43
0.69
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0524EJ0500 Rev.5.00
Jun 12, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/






RJH1CV6DPQ-E0 Datasheet, Funktion
RJH1CV6DPQ-E0
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100
Coes
10
VGE = 0 V
f = 1 MHz
Tc = 25°C
1
0 40
80
Cres
120 160 200
Collector to Emitter Voltage VCE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
600
VCC = 400 V
500 IF = 35 A
400
300 Tc = 150°C
200 25°C
100
0
0 40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
30
VCC = 400 V
25 IF = 35 A
20
Tc = 150°C
15
10
5 25°C
0
0 40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
IC = 35 A
VCC = 300 V
Tc = 25°C
600
VGE
16
12
400 8
200 4
VCE
00
0 20 40 60 80 100 120
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
3.0
VCC = 400 V
2.5 IF = 35 A
2.0 Tc = 150°C
1.5
1.0
www.DataSheet.net/
0.5
25°C
0
0 40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
80
VCE = 0 V
Pulse Test
60
Tc = 25°C
40
20
150°C
0
01234
C-E Diode Forward Voltage VCEF (V)
R07DS0524EJ0500 Rev.5.00
Jun 12, 2012
Page 6 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/

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