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RJH60F3DPK Schematic ( PDF Datasheet ) - Renesas

Teilenummer RJH60F3DPK
Beschreibung High Speed Power Switching
Hersteller Renesas
Logo Renesas Logo 




Gesamt 8 Seiten
RJH60F3DPK Datasheet, Funktion
Preliminary Datasheet
RJH60F3DPK
Silicon N Channel IGBT
High Speed Power Switching
R07DS0199EJ0200
Rev.2.00
Dec 01, 2010
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
1
23
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
www.DataSheet.net/
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-c
Tj
Tstg
Ratings
600
±30
40
20
80
80
178.5
0.7
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0199EJ0200 Rev.2.00
Dec 01, 2010
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/






RJH60F3DPK Datasheet, Funktion
RJH60F3DPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
1 D=1
0.5
0.2
0.1
0.05
0.1 0.01 0.02
1 shot pulse
0.01
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 0.7°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
1m
θj – c(t) = γs (t) • θj – c
θj – c = 2°C/W, Tc = 25°C
www.DataSheet.net/
PDM
PW
T
D=
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp
Rg
L
D.U.T
VCC
VGE
10%
90%
IC
VCE
10%
td(on) tr
ton
90%
10%
1%
td(off) tf ttail
toff
10%
R07DS0199EJ0200 Rev.2.00
Dec 01, 2010
Page 6 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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