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PDF RJL6032DPP-M0 Data sheet ( Hoja de datos )
| Número de pieza | RJL6032DPP-M0 | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RJL6032DPP-M0 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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RJL6032DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 3.3 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
High speed switching
Built in fast recovery diode
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
G
Absolute Maximum Ratings
www.DataSheet.net/
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note1
IAPNote3
Pch Note 2
Channel to case thermal Impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Preliminary Datasheet
R07DS0250EJ0100
Rev.1.00
Jan 27, 2010
D
1. Gate
2. Drain
3. Source
S
Value
600
30
2
8
2
30.6
4.08
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
W
C/W
C
C
R07DS0250EJ0100 Rev.1.00
Jan 27, 2010
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
RJL6032DPP-M0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
1 D=1
0.5
0.3 0.2
0.1
0.1 0.05
0.02
1shot pulse
0.01
0.03
0.0001
0.001
0.01
0.1
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.08°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1 10 100 1000
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
www.DataSheet.net/
10%
10%
90%
td(on)
tr
90%
td(off)
10%
tf
R07DS0250EJ0100 Rev.1.00
Jan 27, 2010
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJL6032DPP-M0.PDF ] | |
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