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Teilenummer | RJL6014DPP |
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Beschreibung | Silicon N Channel MOS FET | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 7 Seiten RJL6014DPP
Silicon N Channel MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0262EJ0200
(Previous: REJ03G1853-0100)
Rev.2.00
Mar 01, 2011
Features
Built-in fast recovery diode
trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)
Low on-resistance
RDS(on) = 0.52 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
G
1
23
Absolute Maximum Ratings
www.DataSheet.net/
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
1. Gate
2. Drain
3. Source
S
Ratings
600
30
15
45
15
45
4
0.87
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0262EJ0200 Rev.2.00
Mar 01, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJL6014DPP
Package Dimensions
Package Name
TO-220FN
JEITA Package Code
⎯
RENESAS Code
PRSS0003AB-A
Previous Code
⎯
MASS[Typ.]
2.0g
10 ± 0.3
2.8 ± 0.2
2.54 ± 0.25
φ3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15 0.75 ± 0.15
2.54 ± 0.25
Preliminary
Unit: mm
Ordering Information
Orderable Part Number
RJL6014DPP-00-T2
1050 pcs
www.DataSheet.net/
Quantity
Shipping Container
Box (Tube)
R07DS0262EJ0200 Rev.2.00
Mar 01, 2011
Page 6 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJL6014DPP Schematic.PDF ] |
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