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RFHA1025 Schematic ( PDF Datasheet ) - RFMD

Teilenummer RFHA1025
Beschreibung 280W GaN WIDEBAND PULSED POWER AMPLIFIER
Hersteller RFMD
Logo RFMD Logo 




Gesamt 10 Seiten
RFHA1025 Datasheet, Funktion
RFHA1025
280W GaN
Wideband
Pulsed Power
Amplifier
RFHA1025
280W GaN WIDEBAND PULSED POWER
AMPLIFIER
Package: Flanged Ceramic, 2-Pin
Features
Wideband Operation: 0.96GHz to
1.215GHz
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse
Conditions
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Integrated Matching
Components for High Terminal
Impedances
50V Operation Typical
Performance
Output Pulsed Power 280W
Pulse Width 100S,
Duty Cycle 10%
Small Signal Gain 17dB
High Efficiency 55%
-40°C to 85°C Operating
Temperature
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
RF IN
VG
Pin 1 (CUT )
GND
BASE
RF OUT
VD
Pin 2
Functional Block Diagram
Product Description
www.DataSheet.net/
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density gallium nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Ordering Information
RFHA1025S2
RFHA1025SB
RFHA1025SQ
RFHA1025SR
RFHA1025TR13
RFHA1025PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 0.96GHz to .215GHz;50V
DS120613
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
Datasheet pdf - http://www.DataSheet4U.co.kr/






RFHA1025 Datasheet, Funktion
RFHA1025
16.700
Package Drawing
(All dimensions in mm.)
2 MIN
3.5 MAX
0.600± 0.05
3.000
15.800 17.40± 0.1 8.000
3.100 4x
2.600 4x
1.400
0.254±0.127
Lid
2 MIN
3.5 MAX
3.800±0.2
4.054±0.327
3.000
0.600± 0.05
20.400
24.00± 0.1
0.100+0.05
-0.02
Pin Names and Descriptions
Pin Name Description
www.DataSheet.net/
1 RF IN VG Gate – VG RF Input
2 RF OUT VD Drain – VD RF Output
3 GND BASE Source – Ground Base
6 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120613
Datasheet pdf - http://www.DataSheet4U.co.kr/

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