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Número de pieza | 2SC4324 | |
Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC4324 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4324
2SC4324
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
10
1.5
7
15
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 6 V, IC = 7 mA
VCE = 6 V, IC = 7 mA, f = 1 GHz
VCE = 6 V, IC = 7 mA, f = 2 GHz
VCE = 6 V, IC = 3 mA, f = 1 GHz
VCE = 6 V, IC = 3 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz
¾ 15 ¾
dB
6.5 9.5 ¾
¾ 1.4 ¾
dB
¾ 1.8 3.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 6 V, IC = 7 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾
¾
50
¾
¾
¾
¾
¾
0.55
0.35
1
1
250
¾
0.8
mA
mA
pF
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
1 page 2SC4324
5 2003-03-19
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet 2SC4324.PDF ] |
Número de pieza | Descripción | Fabricantes |
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2SC4324 | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
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