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PDF AM5480N Data sheet ( Hoja de datos )
| Número de pieza | AM5480N | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Analog Power | |
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Analog Power
N-Channel 80-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN2x3-8PP saves board space
• Fast switching speed
• High performance trench technology
AM5480N
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
80 82 @ VGS = 10V
115 @ VGS = 4.5V
DFN2x3-8PP
Top View
ID (A)
±5.4
±4.6
D
S1
S2
S3
G4
8D
7D
G
6D
S
5 D N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
www.DataSheet.co.kr
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
IS
TA=25oC
TA=70oC
PD
TJ, Tstg
80
±20
±5.4
±4.4
±25
2
3.5
2
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RθJA
Maximum
35
81
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM5480_A
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
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