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Número de pieza | AM4992N | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Analog Power | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AM4992N (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Analog Power
AM4992N
Dual N-Channel 100-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
100 430 @ VGS = 10V
480 @ VGS = 4.5V
ID (A)
1.8
1.7
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
18
27
36
45
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
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Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
IS
TA=25oC
TA=70oC
PD
TJ, Tstg
100
±20
1.8
1.4
±7
1.3
2.1
1.3
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
Maximum Junction-to-Ambienta
t <= 5 sec
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Maximum
40
60
Units
oC/W
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM4992_A
Datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet AM4992N.PDF ] |
Número de pieza | Descripción | Fabricantes |
AM4992N | MOSFET ( Transistor ) | Analog Power |
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