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Teilenummer | RJP63F3DPP-M0 |
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Beschreibung | N-Channel IGBT | |
Hersteller | Renesas | |
Logo | ||
Gesamt 7 Seiten RJP63F3DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
• Trench gate and thin wafer technology (G6H series)
• Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
• High speed switching tf = 100 ns typ
• Low leak current ICES = 1 μA max
• Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
Preliminary Datasheet
R07DS0321EJ0200
Rev.2.00
May 26, 2011
C
1
23
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tc = 25°C
1. Gate
2. Collector
G 3. Emitter
www.DataSheet.co.kr
E
Symbol
VCES
VGES
IC
ic(peak) Note1
PC Note2
θj-c
Tj
Tstg
Ratings
630
±30
40
200
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
RJP63F3DPP-M0
Package Dimension
Package Name
TO-220FL
JEITA Package Code
⎯
RENESAS Code
PRSS0003AF-A
Previous Code
TO-220FL
MASS[Typ.]
1.5g
10.0 ± 0.3
2.8 ± 0.2
3.2 ± 0.2
2.54 ± 0.25
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
2.54 ± 0.25
Preliminary
Unit: mm
Ordering Information
Orderable Part No.
RJP63F3DPP-M0-T2
600 pcs
www.DataSheet.co.kr
Quantity
Shipping Container
Box (Tube)
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 6 of 6
Datasheet pdf - http://www.DataSheet4U.net/
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJP63F3DPP-M0 Schematic.PDF ] |
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