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Número de pieza | RJP60F0DPE | |
Descripción | N-Channel IGBT | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJP60F0DPE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Preliminary Datasheet
RJP60F0DPE
600 V - 25 A - IGBT
High Speed Power Switching
R07DS0540EJ0100
Rev.1.00
Sep 09, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)
Trench gate and thin wafer technology
High speed switching
tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
C
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
E
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
PC
j-c
Tj
Tstg
Ratings
600
±30
50
25
100
122
1.02
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0540EJ0100 Rev.1.00
Sep 09, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page RJP60F0DPE
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3 0.2
0.1
0.05
0.1 0.02
0.01
1 shot pulse
0.03
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 1.02°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Diode clamp
L
Waveform
90%
VGE
10%
90%
90%
Rg
D.U.T
VCC
IC
www.DataSheet.co.kr
VCE
10%
td(on) tr
ton
10%
1%
td(off) tf ttail
toff
10%
R07DS0540EJ0100 Rev.1.00
Sep 09, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJP60F0DPE.PDF ] |
Número de pieza | Descripción | Fabricantes |
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