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RJP30H1DPP-M0 Schematic ( PDF Datasheet ) - Renesas

Teilenummer RJP30H1DPP-M0
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller Renesas
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Gesamt 7 Seiten
RJP30H1DPP-M0 Datasheet, Funktion
RJP30H1DPP-M0
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr =80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
Low leak current: ICES = 1 A max.
Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
Preliminary Datasheet
R07DS0466EJ0200
Rev.2.00
Jun 15, 2011
C
1
23
1. Gate
2. Collector
G 3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
www.DataSheet.co.kr
Symbol
VCES
VGES
IC
ic(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
30
200
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0466EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/






RJP30H1DPP-M0 Datasheet, Funktion
RJP30H1DPP-M0
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
RENESAS Code
PRSS0003AF-A
Previous Code
TO-220FL
MASS[Typ.]
1.5g
10.0 ± 0.3
2.8 ± 0.2
3.2 ± 0.2
2.54 ± 0.25
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
2.54 ± 0.25
Preliminary
Unit: mm
Ordering Information
Orderable Part Number
RJP30H1DPP-M0-T2
600 pcs
www.DataSheet.co.kr
Quantity
Shipping Container
Box (Tube)
R07DS0466EJ0200 Rev.2.00
Jun 15, 2011
Page 6 of 6
Datasheet pdf - http://www.DataSheet4U.net/

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