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Teilenummer | RJP30H1DPD |
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Beschreibung | N-Channel Power MOSFET / Transistor | |
Hersteller | Renesas | |
Logo | ||
Gesamt 7 Seiten RJP30H1DPD
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr = 80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 A max.
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
4
C
12 3
G
E
Preliminary Datasheet
R07DS0465EJ0200
Rev.2.00
Jun 15, 2011
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
www.DataSheet.co.kr
Symbol
VCES
VGES
IC
ic(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
30
200
40
3.13
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
RJP30H1DPD
Package Dimensions
Package Name
TO-252
JEITA Package Code
⎯
RENESAS Code
PRSS0004ZJ-A
Previous Code
⎯
MASS[Typ.]
0.319g
6.5 ± 0.3
(5.6 ± 0.5)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(1.2)
2.29 ± 0.5
0.25 Max
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
Preliminary
Unit: mm
Ordering Information
Orderable Part Number
RJP30H1DPD-00-J2
3000 pcs
www.DataSheet.co.kr
Quantity
Shipping Container
Taping
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
Page 6 of 6
Datasheet pdf - http://www.DataSheet4U.net/
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJP30H1DPD Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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