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PDF RJK6013DPP-E0 Data sheet ( Hoja de datos )
| Número de pieza | RJK6013DPP-E0 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK6013DPP-E0
600V - 11A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID Note4
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note3
EAR Note3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0612EJ0100
Rev.1.00
Feb 20, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
600
30
11
33
11
33
4
0.87
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0612EJ0100 Rev.1.00
Feb 20, 2012
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RJK6013DPP-E0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 D=1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1shot
pulse
0.001
10 μ
100 μ
Tc = 25°C
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10 100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
www.DataSheet.co.kr
10%
10%
90%
td(on)
tr
90%
td(off)
10%
tf
R07DS0612EJ0100 Rev.1.00
Feb 20, 2012
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK6013DPP-E0.PDF ] | |
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