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Teilenummer | RJK6012DPP |
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Beschreibung | N-Channel Power MOSFET / Transistor | |
Hersteller | Renesas | |
Logo | ||
Gesamt 7 Seiten RJK6012DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
G
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
ID Note4
ID
Note1
(pulse)
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR (pulse) Note1
IAP Note3
EAR Note3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Preliminary Datasheet
REJ03G1581-0200
Rev.2.00
Jun 30, 2010
D
1. Gate
2. Drain
3. Source
S
Ratings
600
30
10
20
10
20
3
0.49
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1581-0200 Rev.2.00
Jun 30, 2010
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
RJK6012DPP
Package Dimensions
Package Name
TO-220FN
JEITA Package Code
⎯
RENESAS Code
PRSS0003AB-A
Previous Code
⎯
MASS[Typ.]
2.0g
10 ± 0.3
2.8 ± 0.2
2.54 ± 0.25
φ3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15 0.75 ± 0.15
2.54 ± 0.25
Preliminary
Unit: mm
Ordering Information
Part No.
RJK6012DPP-00-T2
Quantity
1050 pcs
www.DataSheet.co.kr
Box (Tube)
Shipping Container
REJ03G1581-0200 Rev.2.00
Jun 30, 2010
Page 6 of 6
Datasheet pdf - http://www.DataSheet4U.net/
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJK6012DPP Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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