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Número de pieza | RJK6006DPP-E0 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJK6006DPP-E0 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJK6006DPP-E0
600V - 5A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Symbol
VDSS
VGSS
ID Note4
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAPNote3
EARNote3
Pch Note 2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0610EJ0100
Rev.1.00
Mar 16, 2012
D
1. Gate
2. Drain
3. Source
S
Value
600
30
5
15
5
15
5
1.36
29
4.31
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page RJK6006DPP-E0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1shot
pulse
0.001
10 μ
100 μ
Tc = 25°C
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.31°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10 100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 200 V
Waveform
90%
Vin
Vout
www.DataSheet.co.kr
10%
10%
90%
td(on)
tr
90%
td(off)
10%
tf
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJK6006DPP-E0.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJK6006DPP-E0 | N-Channel Power MOSFET / Transistor | Renesas |
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