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PDF RJK1536DPE Data sheet ( Hoja de datos )

Número de pieza RJK1536DPE
Descripción N-Channel Power MOSFET / Transistor
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJK1536DPE Hoja de datos, Descripción, Manual

RJK1536DPE
N-Channel Power MOSFET
High-Speed Switching Use
Features
VDSS : 150 V
RDS(on) : 30 m(Max)
ID : 50 A
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
1G
Preliminary Datasheet
REJ03G1612-0300
Rev.3.00
Jun 30, 2010
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Application
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Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Value at Tc = 25C
2. STch = 25C, Tch 150C, L = 100 H
Symbol
VDSS
VGSS
ID
ID (pulse)
IDR
IDR (pulse)
IAP Note2
Pch Note1
ch-c
Tch
Tstg
Ratings
150
±20
50
100
50
100
25
125
1.0
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
C/W
C
C
REJ03G1612-0300 Rev.3.00
Jun 30, 2010
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/

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RJK1536DPE pdf
RJK1536DPE
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
10 V
30 5 V
20
VGS = 0 V, -5 V
10
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
Avalanche Current vs.Case Temperature
30
L = 100 μH
25
20
15
10
5
0
25 50 75 100 125 150 175 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
0.3 0.2
0.1
0.05
0.1
0.02
0.01
0.03 1shot pulse
0.01
100 μ
1m
θch – c(t) = γs (t) • θch – c
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θch – c = 1.00°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
25 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 80 V
Waveform
90%
Vin 10%
Vout 10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1612-0300 Rev.3.00
Jun 30, 2010
Page 5 of 6
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