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RJK1212DPA Schematic ( PDF Datasheet ) - Renesas

Teilenummer RJK1212DPA
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller Renesas
Logo Renesas Logo 




Gesamt 7 Seiten
RJK1212DPA Datasheet, Funktion
RJK1212DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 240 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 678
Preliminary Datasheet
R07DS0091EJ0100
Rev.1.00
Jun 18, 2011
5 678
D DDD
4 32 1
4
G
www.DataSheet.co.kr
S SS
1 23
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
120
+12, -5
3
9
3
2
0.34
15
8.33
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0091EJ0100 Rev.1.00
Jun 18, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/






RJK1212DPA Datasheet, Funktion
RJK1212DPA
Package Dimensions
Package Name
WPAK(2)
JEITA Package Code
RENESAS Code
PWSN0008DC-A
Previous Code
WPAK(2)V
MASS[Typ.]
0.07g
5.1 ± 0.2
0.8Max
0.04Min
Preliminary
4.21Typ
1.27Typ
3.9 ± 0.2
Unit: mm
0.545Typ
1.27Typ
4.90 ± 0.1
0.2Typ
0.4 ± 0.06
Ordering Information
Orderable Part Number
Quantity
RJK1212DPA-00-J53
3000 pcs
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
www.DataSheet.co.kr
Taping
Shipping Container
R07DS0091EJ0100 Rev.1.00
Jun 18, 2011
Page 6 of 6
Datasheet pdf - http://www.DataSheet4U.net/

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