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Número de pieza DAN222G
Descripción Common Cathode Silicon Dual Switching Diode
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DAN222G
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT--416/SC--75 package which is designed
for low power surface mount applications, where board space is at a
premium.
Features
Fast trr
Low CD
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25C)
Rating
Symbol
Value
Unit
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current (Note 1)
THERMAL CHARACTERISTICS
VR
VRM
IF
IFM
IFSM
80
80
100
300
2.0
Vdc
Vdc
mAdc
mAdc
Adc
www.DataSheet.co.kr
Characteristic
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature Range
PD 150 mW
TJ 150 C/W
Tstg --55 to C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 mS
http://onsemi.com
CATHODE
3
12
ANODE
1
SC--75/SOT--416
CASE 463
STYLE 3
MARKING DIAGRAM
N9 M G
G
1
N9 = Specific Device Code
M = Date Code*
G = Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
DAN222G
SC--75/SOT--416 3000/Tape & Reel
(Pb--Free)
DAN222T1G SC--75/SOT--416 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 6
1
Publication Order Number:
DAN222/D
Datasheet pdf - http://www.DataSheet4U.net/

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